The influence of O₂ partial pressure on saturation magnetization, coercivity, anisotropy field and effective permeability(over 1 ㎓) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were inves...
The influence of O₂ partial pressure on saturation magnetization, coercivity, anisotropy field and effective permeability(over 1 ㎓) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film fabricated at O₂ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization (4πMs) of 18.1 kG, coercivity (Hc) of 0.82 Oe, anisotropy field (Hk) of 24 Oe, and effective permeability (μeff) about 1,024 above 1 ㎓. The electrical resistivity of Co-Fe-Al-O thin films were increased with increasing O₂ partial pressure, the electrical resistivity of Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film with the best soft magnetic properties was 560.7 μΩ㎝. Therefore, It is assumed that the good soft magnetic properties of Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film results from high electrical resistivity and large anisotropy field.