선형열처리법으로 접합한 실리콘 기판에서 열원의 이동속도가 기판의 접합강도에 미치는 영향에 대한 연구 = Effect of Moving Velocity of the Heat Source on Bonding Strength in the Direct Silicon Wafer Bonding Using Linear Annealing Method

다국어 초록 (Multilingual Abstract)

A linear annealing method was utilized to make a direct wafer bonding of 10 ㎝ Si wafers for a SOI application. In the linear annealing method, a halogen lamp moves with a constant velocity above silicon wafer pair bonded with hydrogen bonding. In order to optimize the processing parameters such as initial heat treatment time and moving velocity, bonding strengths were measured when the moving velocity varies in the range of 0.05-0.5 ㎜/s and these results were compared with numerical calculation using finite difference method. The bonding strength from the high speed anneal (0.5 ㎜/s) showed a similar strength as that from the slow speed (0.05 ㎜/s) process and this result agrees with the numerical calculation. Based on the present study, it is expected that the process speed can be increased as high as 200 sec/wafer without decreasing the bonding strength.

목차 (Table of Contents)

• 1. 서론
• 2. 실험 방법
• 열처리 실험을 통한 선형열처리 공정의 변수 최적화
• 전산 모사를 통한 선형 열처리 공정의 변수 최적화
• 3. 결과 및 고찰
• 실험을 통한 선형 열처리 공정의 변수 최적화
• 할로겐 램프의 복사에너지 분포 결과
• 실리콘 기판의 온도분포
• 4. 결론
• 후기