Role of CH₂I₂ Catalysis in Chemically Enhanced MOCVD Cu Process: Nature of Superfilling in Copper Thin Film Growth

다국어 초록 (Multilingual Abstract)

This study is concerned with the effect of CH₂I₂ iodine catalysis on the film structure and superfilling properties of Chemically Enhanced Chemical Vapor Deposition (CECVD) Cu process. It was found that, under optimal conditions, treatment of MOCVD Cu deposition with a chemical enhancer increases deposition rate and intensity and decreases the incubation time and surface roughness. These results imply that the chemical enhancer has a surfactant effect that promotes two-dimensional layer-by-layer growth. The deposition of CECVD Cu film in the low temperature region (< 150℃) shows superfilling behavior and void-free filling, but shows
conformal step coverage in the intermediate temperature range. The growth of CECVD Cu film does not proceed in a layer-by-layer manner, and becomes agglomerate in the high temperature region (190℃). Superconformal coverage and the best superfilling performance of CEMOCVD Cu film is demonstrated with a (hfac)Cu(DMB) precursor of 0.10 um feature size and 17500A height [AR = 17.5:1].

다국어 초록 (Multilingual Abstract)

This study is concerned with the effect of CH₂I₂ iodine catalysis on the film structure and superfilling properties of Chemically Enhanced Chemical Vapor Deposition (CECVD) Cu process. It was found that, under optimal conditions, treatment of MOCVD Cu deposition with a chemical enhancer increases deposition rate and intensity and decreases the incubation time and surface roughness. These results imply that the chemical enhancer has a surfactant effect that promotes two-dimensional layer-by-layer growth. The deposition of CECVD Cu film in the low temperature region (< 150℃) shows superfilling behavior and void-free filling, but shows
conformal step coverage in the intermediate temperature range. The growth of CECVD Cu film does not proceed in a layer-by-layer manner, and becomes agglomerate in the high temperature region (190℃). Superconformal coverage and the best superfilling performance of CEMOCVD Cu film is demonstrated with a (hfac)Cu(DMB) precursor of 0.10 um feature size and 17500A height [AR = 17.5:1].

참고문헌 (Reference)

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