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Nanoscale Gate Stacks: From Atomic Defects to Device Performance
Bersuker, G.; Park, C.; Price, J.; Lysaght, P.; Kirsch, P.; Jammy, R. Pennington, N.J.; Electrochemical Society 2009 p.3-10
Impact of Gate Dielectric Breakdown Induced Microstructural Defects on Transistor Reliability
Li, X.; Pey, K.; Lo, V.; Ranjan, R.; Tung, C.; Tang, L. Pennington, N.J.; Electrochemical Society 2009 p.11-26
Time-to-Breakdown Behavior and Mechanism on U-grooved n-MOSFET
Seo, J.; Park, H.; Kang, G.; Kang, J.; So, B. Pennington, N.J.; Electrochemical Society 2009 p.27-34
TFT Technology Programs in China
Xiong, S.; Meng, Z.; Wu, C.; Li, J.; He, J.; Zhang, F. Pennington, N.J.; Electrochemical Society 2009 p.35-48
Templier, F. Pennington, N.J.; Electrochemical Society 2009 p.49-56
Single Grain Si TFTs for RF and 3D ICs
Ishihara, R.; Baiano, A.; Chen, T.; Derakhshandeh, J.; Mofrad, M.D.T.; Danesh, M.; Saputra, N.; Long, J.R.; Beenakker, C.I. Pennington, N.J.; Electrochemical Society 2009 p.57-70
High Scalability and Low Variability of Planar Fully Depleted SOI MOSFETs
Weber, O.; Andrieu, F.; Fenouillet-Beranger, C.; Buj-Dufournet, C.; Barral, V.; Perreau, P.; Tosti, L.; Brevard, L.; Faynot, O. Pennington, N.J.; Electrochemical Society 2009 p.71-80
Selective Epitaxy of Si and SiGe for Future MOS Devices
Mizushima, I. Pennington, N.J.; Electrochemical Society 2009 p.81-90
Substrate Engineering for 32nm and Beyond
Nguyen, B.; Mazure, C.; Celler, G. Pennington, N.J.; Electrochemical Society 2009 p.91-98
Defect Aspects of Ge-on-Si Materials and Devices
Claeys, C.; Eneman, G.; Wang, G.; Souriau, L.; Loo, R.; Simoen, E. Pennington, N.J.; Electrochemical Society 2009 p.99-110