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The analysis and simulation of 300V DMOSFET for smart power application has been performed. The effect of the device structural parameter on the breakdown and device performance was analyzed for optimal design. The design criteria for the high voltage...
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RISS 인기검색어
부가정보
다국어 초록 (Multilingual Abstract)
The analysis and simulation of 300V DMOSFET for smart power application has been performed. The effect of the device structural parameter on the breakdown and device performance was analyzed for optimal design. The design criteria for the high voltage DMOSFET was proposed and verified using the device simulator, DESSIS from ISE.
The device structure for the LDMOSFET with 300V breakdown voltage was designed
and verified using simulation. Finally the design methodology for the potimal structure of high voltage SOI LDMOSFET was proposed. The process condition was calculate based on independent thermal diffusion approximation and verified by the process and device simulation.
The device structure for the LDMOSFET with 300V breakdown voltage was designed
and verified using simulation. Finally the design methodology for the potimal structure of high voltage SOI LDMOSFET was proposed. The process condition was calculate based on independent thermal diffusion approximation and verified by the process and device simulation.
The analysis and simulation of 300V DMOSFET for smart power application has been performed. The effect of the device structural parameter on the breakdown and device performance was analyzed for optimal design. The design criteria for the high voltage DMOSFET was proposed and verified using the device simulator, DESSIS from ISE.
The device structure for the LDMOSFET with 300V breakdown voltage was designed
and verified using simulation. Finally the design methodology for the potimal structure of high voltage SOI LDMOSFET was proposed. The process condition was calculate based on independent thermal diffusion approximation and verified by the process and device simulation.
목차 (Table of Contents)
- Ⅰ. 서론
- Ⅱ. 소자설계및 특성해석
- Ⅲ. 시뮬레이션 결과
- Ⅳ. 결론
- Ⅰ. 서론
- Ⅱ. 소자설계및 특성해석
- Ⅲ. 시뮬레이션 결과
- Ⅳ. 결론
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