Growth of AlN/GaN HEMT structure Using Indium-surfactant

다국어 초록 (Multilingual Abstract)

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to 1070 ℃, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 ㎚ grown at of 800 ℃ exhibited best Hall measurement results; such as sheet resistance of 215 Ω/□, electron mobility of 1430 ㎠/V·s, and two-dimensional electron gas (2DEG) density of 2.04 ｘ 10<SUP>13</SUP> /㎠. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of 0.2 ㎛ exhibited excellent DC and RF performances; such as maximum drain current of 937 ㎃/㎜, maximum transconductance of 269 mS/㎜, current gain cut-off frequency of 40 ㎓, and maximum oscillation frequency of 80 ㎓.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. EXPERIMENTAL DETAILS
• Ⅲ. RESULTS AND DISCUSSION
• Ⅳ. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

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