The physical mechanism generated by irradiation in the insulator layer irradiated MIS(Metal-Insulator-Semiconductor) device is investigated by experiment and compared with theoretical results.
Irradiation characteristics depending on the irradiation ...
The physical mechanism generated by irradiation in the insulator layer irradiated MIS(Metal-Insulator-Semiconductor) device is investigated by experiment and compared with theoretical results.
Irradiation characteristics depending on the irradiation dose rate, insulator thickness, and implanted impurity are examined respectively & throughly.
Also, using numerical analysis, continuity equations(conduction-band electrons continuity equation valence band holes continuity equation trapped electrons continuity equation trapped holes continuity equation) are solved and the numerical results have a good agreement with experimental results.