Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO_x Gate Insulator

다국어 초록 (Multilingual Abstract)

<P>We report the effect of purification of ZrO<SUB>x</SUB> precursor on the performance of solution processed amorphous indium–zinc–tin oxide thin-film transistors with a ZrO<SUB>x</SUB> gate insulator, which is processed at the maximum temperature of 300 °C in air. By purification, the saturation mobility ( <TEX>$\mu _{\textit {sat}}$</TEX>) increases from 2.45 ± 0.83 to 15.42 ± 4.01 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP>, subthreshold swing decreases from 141.44 ± 14.08 to 87.90 ± 11.05 mV/decade and drain current ON/OFF ratio increases from ~10<SUP>7</SUP> to ~10<SUP>9</SUP>. The leakage currents are remarkably reduced by using purified ZrO<SUB>x</SUB> as a gate insulator. The improvement is mainly due to the reduced impurities and less oxygen vacancies in ZrO<SUB>x</SUB>.</P>