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      KCI등재 SCOPUS SCIE

      Si-N 코팅막의 기계적 물성 및 구조 분석 = Characterization of Silicon Nitride Coating Films

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      https://www.riss.kr/link?id=A105147175

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      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

      Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon ratio was found to have values in a range from 0 to 1.4. Coated film was characterized with scanning electron microscopy, transmission electron microscopy, electron probe microanalysis, nanoindentation scanning probe microscopy, x-ray photon spectrometry, and Raman spectrometry. Silicon nitride phase in all samples showed amorphous nature regardless of N/Si ratio. When N/Si ratio was 1.25, hardness and elastic modulus of silicon nitride film showed maximum with 22 GPa and 210 GPa, respectively. Those values decreased, when N/Si ratio was higher than 1.25. Raman spectrum showed that no silicon phase exist in the film. XPS result showed that the silicon-nitrogen bond was dominant way for atomic bonding in the film. The structure and property was explained with Random Bonding Model(RBM) which was consistent with the microstructure and chemistry analysis for the coating films.
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      Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon...

      Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon ratio was found to have values in a range from 0 to 1.4. Coated film was characterized with scanning electron microscopy, transmission electron microscopy, electron probe microanalysis, nanoindentation scanning probe microscopy, x-ray photon spectrometry, and Raman spectrometry. Silicon nitride phase in all samples showed amorphous nature regardless of N/Si ratio. When N/Si ratio was 1.25, hardness and elastic modulus of silicon nitride film showed maximum with 22 GPa and 210 GPa, respectively. Those values decreased, when N/Si ratio was higher than 1.25. Raman spectrum showed that no silicon phase exist in the film. XPS result showed that the silicon-nitrogen bond was dominant way for atomic bonding in the film. The structure and property was explained with Random Bonding Model(RBM) which was consistent with the microstructure and chemistry analysis for the coating films.

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      참고문헌 (Reference)

      1 "internal stress and thermal stability of nc-TiN/a-SiN N superhard nanocomposite coatings rearching the hardness of diamond" 120-, 1999

      2 "and origin of the ultrahardness in nc-TiN/a-Si3N4/a- and nc-TiSi2 nanocomposites with Hv=80 to≥105 GPa" na (na): 152-159, 2000

      3 "XPS investigation on the growth model of a-SiNx and silicon and nitrogen chemical bondings" 1990

      4 "X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride" 3048-3055, 1989

      5 "X-ray photoelectron and auger electron spectroscopy studies of photochemical vapor deposition silicon nitrides" 2226-2231, 1988

      6 "The electronic properties of silicon nitride" 44 (44): 215-237, 1981

      7 "Tetrahedron-model analysis of silicon nitride thin film and the effect of hydrogen and temperature on their optical properties" 50 (50): 11801-11816, 1994

      8 "Structure-performance relations in nanocomposite coatings" 146-, 2001

      9 "Structural transitions in hard Si-based TiN coatings the effect of bias voltage and temperature" 146-, 2001

      10 "Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition" 7374-7381, 1991

      1 "internal stress and thermal stability of nc-TiN/a-SiN N superhard nanocomposite coatings rearching the hardness of diamond" 120-, 1999

      2 "and origin of the ultrahardness in nc-TiN/a-Si3N4/a- and nc-TiSi2 nanocomposites with Hv=80 to≥105 GPa" na (na): 152-159, 2000

      3 "XPS investigation on the growth model of a-SiNx and silicon and nitrogen chemical bondings" 1990

      4 "X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride" 3048-3055, 1989

      5 "X-ray photoelectron and auger electron spectroscopy studies of photochemical vapor deposition silicon nitrides" 2226-2231, 1988

      6 "The electronic properties of silicon nitride" 44 (44): 215-237, 1981

      7 "Tetrahedron-model analysis of silicon nitride thin film and the effect of hydrogen and temperature on their optical properties" 50 (50): 11801-11816, 1994

      8 "Structure-performance relations in nanocomposite coatings" 146-, 2001

      9 "Structural transitions in hard Si-based TiN coatings the effect of bias voltage and temperature" 146-, 2001

      10 "Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition" 7374-7381, 1991

      11 "Raman study of silicon nanocrystals formed in SiNx films by excimer laser or thermal annealing" 73 (73): 1212-1214, 1998

      12 "Raman shifts in Si nanocrystals" 200-2021996

      13 "Raman scattering from small particle size polycrystalline silicon" 1981

      14 "Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient" 2002

      15 "Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors" -232, 2002

      16 "Optical and structural properties of SiOx and SiNx materials" 1995

      17 "Optical and bonding model for non-crystalline SiOx and SiOxNy materials" 8-, 1972

      18 "Nano-crystalline silicon in a-SiNx" 45-49, 1991

      19 "Model of inactive nitrogen incorporation in amorphous silicon" 1986

      20 "Mechanical properties of superhard nanocomposites" 2001

      21 "Improving the properties of titanium nitride by incorporation of silicon" 1998

      22 "ESCA and SEXAFS investigations of insulation materials for ULSI microelectromics Vacuum" 7 1586-9 1589, 1990

      23 "Characterization of Ti1-xSixNy nanocomposite films" 133-, 2000

      24 "Analysis of plasma-deposited SiNx films using XPS" 25-30, 1993

      25 "An analysis of the radial distribution function of SiOx" 17 (17): 215-230, 1975

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      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
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      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2004-01-01 평가 등재학술지 유지 (등재유지) KCI등재
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      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.16 0.16 0.17
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.16 0.16 0.331 0.06
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