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Miranda, E.; O Connor, E.; Hughs, G.; Casey, P.; Cherkaoui, K.; Monaghan, S.; Long, R.; O Connell, D.; Hurley, P. Pennington, N.J.; Electrochemical Society 2009 p.2111
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al~2O~3 Gate Dielectric
Chang, C.; Chang, E.; Huang, W.; Su, Y.; Trinh, H.; Hsu, H.; Miyamoto, Y. Pennington, N.J.; Electrochemical Society 2009 p.2112
Ji, J.; Kim, Y.; Woo, S.; Kim, H.; Um, P.; Kim, C. Pennington, N.J.; Electrochemical Society 2009 p.2120
Nitrogen Incorporation in Al~2O~3 Thin Films Prepared by Pulsed Ultrasonic Sprayed Pyrolysis
Carmona-Tellez, S.; Palacio, C.; Gallardo, S.; Rivera, Z.; Guzman-Mendoza, J.; Aguilar-Frutis, M.; Garcia-Hipolito, M.; Alarcon-Flores, G.; Falcony, C. Pennington, N.J.; Electrochemical Society 2009 p.2121
Inoue, T.; Shigenari, S. Pennington, N.J.; Electrochemical Society 2009 p.2122
High Density MIM Capacitors Using HfAlO~x
Hota, M.; Mahata, C.; Sarkar, C.; Maiti, C. Pennington, N.J.; Electrochemical Society 2009 p.2123
Ding, S.; Huang, Y.; Sun, Q.; Zhang, W. Pennington, N.J.; Electrochemical Society 2009 p.2124
Group-II Hafnate, Zirconate, and Tantalate High-k Dielectrics for MIM Applications: The Defect Issue
Dabrowski, J.; Dudek, P.; Kozlowski, G.; Lupina, G.; Lippert, G.; Wenger, C. Pennington, N.J.; Electrochemical Society 2009 p.2125
Impact of Voltage and Current Stress on TiN/HfSi~xO~y/TiN MIM Capacitors
Jyothi, K.; Chandorkar, A.; Misra, D. Pennington, N.J.; Electrochemical Society 2009 p.2126
Progress Towards Passivation of High-Mobility Channels
Houssa, M.; Afanas ev, V.; Stesmans, A.; Meuris, M.; Heyns, M. Pennington, N.J.; Electrochemical Society 2009 p.2127