Novel electrodes and gate dielectrics for field-effecttransistors based on two-dimensional materials

다국어 초록 (Multilingual Abstract)

Two-dimensional (2D) materials are atomically thin materials that show quan-tum confinement effect. They have been studied as promising materials forfield-effect transistors (FETs). The fabrication of an FET mainly concerns how todeposit metal electrodes and dielectrics onto the 2D material channel. Andconventional fabrication processes are not optimized for novel applications of2D FETs. This review aims to introduce recent studies regarding novel elec-trodes and dielectrics for 2D FETs. The devices made by these approachesshow comparable performance to conventional FETs. And they feature newapplications and easy fabrication. This review covers the topics in two sections:evaporation-free electrodes and nonoxide dielectrics. The former covers elec-trodes prepared without direct deposition of metals using evaporators or sput-ters. The latter encompasses alternatives to oxide dielectrics. These topicswould be beneficial to realize the intrinsic properties of 2D materials and toassist fundamental research with prototyping FETs on a tabletop.

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