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      5.4비트의 유효비트를 가지는 1V 1.6-GS/s 6비트 플래쉬 아날로그-디지털 변환기

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      https://www.riss.kr/link?id=A99822419

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      다국어 초록 (Multilingual Abstract)

      This paper proposes A 1V 1.6-GS/s 6-bit flash analog-to-digital converter(ADC). A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation and the dynamic performance of flash ADC is increased by adding a SR latch at the output node of each comparator. The proposed flash ADC is fabricated using a 90nm 1-poly 9-metal CMOS process with 1V supply. The measured DNL(Differential Non-linearity) and INL(Integral Non-linearity) are +0.56/-0.49 LSB(Least Significant Bit) and +0.74/-0.84 LSB, respectively. The measured SNDR(Signal-to-Noise and Distortion Ratio) and ENOB(Effective Number of Bits) are 34.3dB and 5.4 bit for a 800 MHz analog input signal. The ENOB of 0.3 bit was improved by the SR latch added at the output node of each comparator. The power consumption and chip area of flash ADC are 800×500μ㎡ and 399.3mW, respectively.
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      This paper proposes A 1V 1.6-GS/s 6-bit flash analog-to-digital converter(ADC). A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation and the dynamic performanc...

      This paper proposes A 1V 1.6-GS/s 6-bit flash analog-to-digital converter(ADC). A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation and the dynamic performance of flash ADC is increased by adding a SR latch at the output node of each comparator. The proposed flash ADC is fabricated using a 90nm 1-poly 9-metal CMOS process with 1V supply. The measured DNL(Differential Non-linearity) and INL(Integral Non-linearity) are +0.56/-0.49 LSB(Least Significant Bit) and +0.74/-0.84 LSB, respectively. The measured SNDR(Signal-to-Noise and Distortion Ratio) and ENOB(Effective Number of Bits) are 34.3dB and 5.4 bit for a 800 MHz analog input signal. The ENOB of 0.3 bit was improved by the SR latch added at the output node of each comparator. The power consumption and chip area of flash ADC are 800×500μ㎡ and 399.3mW, respectively.

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      참고문헌 (Reference)

      1 H. Banba., "A CMOS Bandgap Reference Circuit with Sub-1-V Operation" 34 (34): 670-674, 1999

      2 G. Geelen, "A 6-bit 1. 1 Gsample/s CMOS A/D converter" 128-129, 2001

      3 P. C. S. Scholtens., "A 6-b 1. 6-Gsample/s flash ADC in 0. 18-μm CMOS using averaging termination" 37 (37): 1599-1609, 2002

      4 M. Choi., "A 6-b 1. 3Gsample/s A/D converter in 0. 35-μm CMOS" 36 (36): 1847-1858, 2001

      5 A. Ismail., "A 6-Bit 1. 6-GS/s Low-Power Wideband Flash ADC Converter in 0. 13-um CMOS Technology" 43 (43): 1982-1990, 2008

      6 Y. -Z. Lin., "A 2-GS/s 6-bit flash ADC with offset calibration" 385-388, 2008

      7 T. B. Cho., "A 10 b, 20 Msample/s, 35 mW pipeline A/D converter" 30 (30): 166-172, 1995

      8 장영찬, "A 1.2 V 7-bit 1 GS/s CMOS Flash ADC with Cascaded Voting and Offset Calibration" 대한전자공학회 8 (8): 318-325, 2008

      1 H. Banba., "A CMOS Bandgap Reference Circuit with Sub-1-V Operation" 34 (34): 670-674, 1999

      2 G. Geelen, "A 6-bit 1. 1 Gsample/s CMOS A/D converter" 128-129, 2001

      3 P. C. S. Scholtens., "A 6-b 1. 6-Gsample/s flash ADC in 0. 18-μm CMOS using averaging termination" 37 (37): 1599-1609, 2002

      4 M. Choi., "A 6-b 1. 3Gsample/s A/D converter in 0. 35-μm CMOS" 36 (36): 1847-1858, 2001

      5 A. Ismail., "A 6-Bit 1. 6-GS/s Low-Power Wideband Flash ADC Converter in 0. 13-um CMOS Technology" 43 (43): 1982-1990, 2008

      6 Y. -Z. Lin., "A 2-GS/s 6-bit flash ADC with offset calibration" 385-388, 2008

      7 T. B. Cho., "A 10 b, 20 Msample/s, 35 mW pipeline A/D converter" 30 (30): 166-172, 1995

      8 장영찬, "A 1.2 V 7-bit 1 GS/s CMOS Flash ADC with Cascaded Voting and Offset Calibration" 대한전자공학회 8 (8): 318-325, 2008

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 재인증평가 신청대상 (재인증)
      2019-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2016-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2012-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2008-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2006-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.45 0.45 0.39
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.38 0.35 0.566 0.16
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