This paper describes the discharge parameters in SiH_4 gas calculated for the range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors a...
This paper describes the discharge parameters in SiH_4 gas calculated for the range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of the discharge parameters are obtained for the TOF method. The theoretical results of the discharge parameter such as the electron drift velocity, characteristic energy agree with the experimental values for the range of E/N. The electron energy distributions function were analyzed in monosilane at the E/N : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by the TOF method.