1 K. Hamada, 54 : 04DP07-, 2015
2 B. A. Hull, 1042-, 2011
3 F. Dahlquist, Kungl Tekniska H¨ogskolan 2002
4 Y. K. Lee, 56 : 101-, 2000
5 M. Aketa, 441-, 2014
6 "http://www.infineon.com/cms/en/product/power/sicar bide-sic/650v-thinq!-tm-sic-diode-generation-5/channel. html?channel=db3a3043399628450139b0536bed2187"
7 B. J. Baliga, "Silicon Carbide Power Devices" World Scientific Publishing 2005
8 T. Kimoto, "Fundamentals of Silicon Carbide Technology" John Wiley & Sons 2014
9 강인호, "Fabrication of a 600-V/20-A 4H-SiC Schottky Barrier Diode" 한국물리학회 64 (64): 1886-1891, 2014
10 주성재, "Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process" 한국물리학회 54 (54): 1802-1806, 2009
1 K. Hamada, 54 : 04DP07-, 2015
2 B. A. Hull, 1042-, 2011
3 F. Dahlquist, Kungl Tekniska H¨ogskolan 2002
4 Y. K. Lee, 56 : 101-, 2000
5 M. Aketa, 441-, 2014
6 "http://www.infineon.com/cms/en/product/power/sicar bide-sic/650v-thinq!-tm-sic-diode-generation-5/channel. html?channel=db3a3043399628450139b0536bed2187"
7 B. J. Baliga, "Silicon Carbide Power Devices" World Scientific Publishing 2005
8 T. Kimoto, "Fundamentals of Silicon Carbide Technology" John Wiley & Sons 2014
9 강인호, "Fabrication of a 600-V/20-A 4H-SiC Schottky Barrier Diode" 한국물리학회 64 (64): 1886-1891, 2014
10 주성재, "Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process" 한국물리학회 54 (54): 1802-1806, 2009