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      KCI등재후보

      다결정 실리콘의 화학증착에 대한 연구 = A Study on Chemical Vapor Deposition of Polycrystalline Silicon

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      https://www.riss.kr/link?id=A3000357

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      다국어 초록 (Multilingual Abstract)

      Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using SiCl₄, H₂gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated.
      From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

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      Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using SiCl₄, H₂gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition r...

      Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using SiCl₄, H₂gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated.
      From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

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      목차 (Table of Contents)

      • Ⅰ.서 론
      • Ⅱ.이론적 고찰
      • ⅰ)증착온도
      • ⅱ)전체유량
      • Ⅲ.실험방법
      • Ⅰ.서 론
      • Ⅱ.이론적 고찰
      • ⅰ)증착온도
      • ⅱ)전체유량
      • Ⅲ.실험방법
      • Ⅳ.실험결과 및 고찰
      • (1)증착온도의 영향
      • (2)전체유량의 영향
      • Ⅴ.결론
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