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다국어 초록 (Multilingual Abstract)

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

목차 (Table of Contents)

Abstract
1. 서론
2. 실험장치 및 실험방법
3. 실험결과 및 고찰
4. 결론

Abstract
1. 서론
2. 실험장치 및 실험방법
3. 실험결과 및 고찰
4. 결론
References

참고문헌 (Reference)

1 Y.M. Park, "Low temperature growth of CVD nanocrystalline diamond thin film by designed SWP-CVD with various working pressures" 11 : 1292-1297, 2019

2 Takeyasu Saito, "Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition" 7 : 1381-1384, 1998

3 Yutaka Ando, "Epitaxial lateral overgrowth of diamonds on Iridium by patterned nucleation and growth method" 51 : 090101-, 2012

4 Mamoru Yoshimoto, "Epitaxial diamond growth on sapphire in an oxidizing environment" 399 : 340-342, 1999

5 Yi-Chun Chen, "Chemical vapor deposition of diamond on an adamantane-coated sapphire substrate" 4 : 18945-18950, 2014

6 J,S Kim, "Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD" 29 (29): 150048-, 2015

1 Y.M. Park, "Low temperature growth of CVD nanocrystalline diamond thin film by designed SWP-CVD with various working pressures" 11 : 1292-1297, 2019

2 Takeyasu Saito, "Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition" 7 : 1381-1384, 1998

3 Yutaka Ando, "Epitaxial lateral overgrowth of diamonds on Iridium by patterned nucleation and growth method" 51 : 090101-, 2012

4 Mamoru Yoshimoto, "Epitaxial diamond growth on sapphire in an oxidizing environment" 399 : 340-342, 1999

5 Yi-Chun Chen, "Chemical vapor deposition of diamond on an adamantane-coated sapphire substrate" 4 : 18945-18950, 2014

6 J,S Kim, "Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD" 29 (29): 150048-, 2015

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학술지 이력

학술지 이력
연월일	이력구분	이력상세
2026	평가예정	재인증평가 신청대상 (재인증)
2022-01-28	학술지명변경	외국어명 : Journal of The Korean Institute of Surface Engineering -> Journal of Surface Science and Engineering
2020-01-01	평가	등재학술지 유지 (재인증)
2017-01-01	평가	등재학술지 유지 (계속평가)
2013-01-01	평가	등재 1차 FAIL (등재유지)
2010-01-01	평가	등재학술지 유지 (등재유지)
2008-01-01	평가	등재학술지 유지 (등재유지)
2005-01-01	평가	등재학술지 선정 (등재후보2차)
2004-01-01	평가	등재후보 1차 PASS (등재후보1차)
2003-01-01	평가	등재후보학술지 유지 (등재후보1차)
2002-01-01	평가	등재후보 1차 FAIL (등재후보1차)
1999-07-01	평가	등재후보학술지 선정 (신규평가)