Trichlorosilane 의 수소환원에 의한 고순도 규소제조에 대한 연구 = The Preparation of High-Purity Silicon by Hydrogen Reduction of trichlorosilane

국문 초록 (Abstract)

石英管中에서 trichlorosilane의 水素還元에 依한 珪素裂造에 對한 實驗을 行하였다. 原料 trichlcrosilane을 精留한 다음 소량의 水素로 0℃에서 蒸發시켜 遷元用 水素와 混合하여 反應시켰다. 實驗結果에서의 溫度와 몰比 對한 收率과 熱力學的으로 계산된 理論的인 값을 비교하였다 工程上의 最適의 條件은 溫度 1050∼1100℃에서 trichlorosilane에 對한 水素의 몰比가 60∼100일때 收率은 60∼70%이었다. 析出된 珪素는 금속 광택을 띤 多結晶이었다. 이 珪素를 불화수소산으로 etching 한 후 emission spectroscopy 로 分析해 본 純度는 99.999%이었다.

다국어 초록 (Multilingual Abstract)

Among the several known processes of semiconductorgrade silicon production, the hydrogen reduction of trichlorosilane (TCS) is found to be the most convenient and economical method. In this study of high purity silicon production, the tube flow process is used to redus TCS with hydrogen. The 99.9% pure TCS, manufactured by Ventron, is distilled for the starting material in the reduction. The distilled TCS is vaporized by bubbling with small quantity of hydrogen in a glass tube at 0℃. The resultant yield is especially compared with the theoretical one calculated thermodynamically. The yield of silicon is 60-70% at the optimum condition of 1050-1100℃ reaction temperature and 60-100 mole ratio of hydrogen to TCS. Surface of the deposited silicon, a polycrystalline dense mass of lustrous appearance, is treated with hydrofluoric acid. By the emission spectroscopy the purity of silicon thus produced is determined to be higher than 99.999%.