Layer-by-Layer Doping of Few-Layer Graphene Film

다국어 초록 (Multilingual Abstract)

<P>We propose a new method of layer-by-layer (LbL) doping of thin graphene films. Large area monolayer graphene was synthesized on Cu foil by using the chemical vapor deposition method. Each layer was transferred on a polyethylene terephthalate substrate followed by a salt-solution casting, where the whole process was repeated several times to get LbL-doped thin layers. With this method, sheet resistance was significantly decreased up to ∼80% with little sacrifice in transmittance. Unlike samples fabricated by topmost layer doping, our sample shows better environmental stability due to the presence of dominant neutral Au atoms on the surface which was confirmed by angle-resolved X-ray photoelectron spectroscopy. The sheet resistance of the LbL-doped four-layer graphene (11 × 11 cm<SUP>2</SUP>) was 54 Ω/sq at 85% transmittance, which meets the technical target for industrial applications.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2010/ancac3.2010.4.issue-8/nn1008808/production/images/medium/nn-2010-008808_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn1008808'>ACS Electronic Supporting Info</A></P>