We studied the deposition of poly-Si using Si using SiH₄/He mixtures by inductively coupled plasma chemical vapor deposition. Volume fraction, grain size and deposition rate of poly-Si decreased by adding He into SiH₄ plasma. The decrease of cryst...
We studied the deposition of poly-Si using Si using SiH₄/He mixtures by inductively coupled plasma chemical vapor deposition. Volume fraction, grain size and deposition rate of poly-Si decreased by adding He into SiH₄ plasma. The decrease of crystallinity and deposition rate are due to ion bombardment. when we used SiH₄ as the source gas, the deposition rate was 7.44 A˚/sec. The poly-Si film exhibited the volume fraction from Raman scattering of 83.6% and FWHM of 8.89 cm^1