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      A 6Gb/s Transceiver Design with Phase-Difference Modulation Signaling for Multi-drop DRAM Interface

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      https://www.riss.kr/link?id=A108173889

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      다국어 초록 (Multilingual Abstract)

      In this paper, we designed the phase-difference modulation (PDM) transceiver for the application of PDM signaling in the multi-drop DRAM interface. Because PDM signaling reduced the effect of the reflected signal by positioning the reflected signal be...

      In this paper, we designed the phase-difference modulation (PDM) transceiver for the application of PDM signaling in the multi-drop DRAM interface. Because PDM signaling reduced the effect of the reflected signal by positioning the reflected signal between the clock edges, In addition, PDM transceiver did not increase the hardware cost because it does not demand DFE and FFE circuits. With PDM signaling, we implemented the two amplifiers, which make the design complexity of the clock recovery circuit simple: the clock recovery circuit is a simple interpolator. The proposed PDM transceiver was fabricated in 65 nm CMOS technology and verified the performance by simulations. To verify the performance of the PDM signaling, we compared the simulated 6 Gb/s eye diagram in the multi-drop channel with the NRZ signaling. The simulated vertical and horizontal eye sizes in PDM signaling were increased to 60.5 mV and 63.7 ps, respectively; but the simulated eye was closed in NRZ signaling. Therefore, with PDM signaling, the multi-drop memory interfaces with high capacity are feasible without increasing the power and hardware cost.

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      참고문헌 (Reference)

      1 W. Lee, "Parallel Branching of Two 2-DIMM Sections With Write-Direction Impedance Matching for an 8-Drop 6.4-Gb/s SDRAM Interface" 9 (9): 336-342, 2019

      2 "DDR5 SDRAM Standard, JEDEC standard, JESD79-5"

      3 "DDR4 SDRAM Registered DIMM Design Specification, JEDEC standard, MODULE4.20.28.B"

      4 "DDR4 SDRAM Load Reduced DIMM Design Specification, JEDEC standard, MODULE4.20.27.D"

      5 S. Lee, "A DFE-Enhanced Phase-Difference Modulation Signaling for Multi-Drop Memory Interfaces" 68 (68): 1862-1866, 2021

      6 J. Seo, "A 7.8Gb/s 2.9pJ/b Single-Ended Receiver with 20 tap DFE for Highly-Reflective Channels" 28 (28): 818-822, 2020

      7 S. Lee, "A 7.8 Gb/s/pin, 1.96pJ/b transceiver with phase-difference-modulation signaling for highly reflective interconnects" 67 (67): 2114-2127, 2020

      8 W.-Y. Shin, "A 4.8 Gb/s impedance-matched bidirectional multi-drop transceiver for high-capacity memory interface" 494-495, 2011

      9 Y.-C. Kwon, "25.4 A 20nm 6GB Function-InMemory DRAM, Based on HBM2 with a 1.2 TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications" 350-352, 2021

      1 W. Lee, "Parallel Branching of Two 2-DIMM Sections With Write-Direction Impedance Matching for an 8-Drop 6.4-Gb/s SDRAM Interface" 9 (9): 336-342, 2019

      2 "DDR5 SDRAM Standard, JEDEC standard, JESD79-5"

      3 "DDR4 SDRAM Registered DIMM Design Specification, JEDEC standard, MODULE4.20.28.B"

      4 "DDR4 SDRAM Load Reduced DIMM Design Specification, JEDEC standard, MODULE4.20.27.D"

      5 S. Lee, "A DFE-Enhanced Phase-Difference Modulation Signaling for Multi-Drop Memory Interfaces" 68 (68): 1862-1866, 2021

      6 J. Seo, "A 7.8Gb/s 2.9pJ/b Single-Ended Receiver with 20 tap DFE for Highly-Reflective Channels" 28 (28): 818-822, 2020

      7 S. Lee, "A 7.8 Gb/s/pin, 1.96pJ/b transceiver with phase-difference-modulation signaling for highly reflective interconnects" 67 (67): 2114-2127, 2020

      8 W.-Y. Shin, "A 4.8 Gb/s impedance-matched bidirectional multi-drop transceiver for high-capacity memory interface" 494-495, 2011

      9 Y.-C. Kwon, "25.4 A 20nm 6GB Function-InMemory DRAM, Based on HBM2 with a 1.2 TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications" 350-352, 2021

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 계속평가 신청대상 (계속평가)
      2020-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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