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RISSTiN films were prepared on Si(100) substrate by ICP-CVD(inductively coupled plasma chemical vapor deposition) using TEMAT(tetrakis ethymethamido titanium : Ti[N(CH₃)(C2₂H?]₄) precursor at various deposition conditions. Phase, microstructure, and...
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RISS 인기검색어
ICP-CVD 방법에 의한 TiN barrier metal 형성과 특성 = Characteristics of TiN Barrier Metal Prepared by ICP-CVD Method
한글로보기https://www.riss.kr/link?id=A2029838
- 저자
- 발행기관
- 학술지명
- 권호사항
-
발행연도
1999
-
작성언어
Korean
-
KDC
404
-
자료형태
학술저널
-
수록면
41-49(9쪽)
- 제공처
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
TiN films were prepared on Si(100) substrate by ICP-CVD(inductively coupled plasma chemical vapor deposition) using TEMAT(tetrakis ethymethamido titanium : Ti[N(CH₃)(C2₂H?]₄) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TiN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy(XPS).
Polycrystalline TiN films B1 structure were grown at temperatures over 300℃. Perferentially oriented along TiN(200) films were obtained at temperatures over 400℃ with the folw rates of 5 and 100 sccm for N₂and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TiN and SiO₂was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at 500℃ are 2070 μ Ωcm, 6.06X10? cm?³and 10.5X10³㎠/V·sec, respectively.
Polycrystalline TiN films B1 structure were grown at temperatures over 300℃. Perferentially oriented along TiN(200) films were obtained at temperatures over 400℃ with the folw rates of 5 and 100 sccm for N₂and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TiN and SiO₂was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at 500℃ are 2070 μ Ωcm, 6.06X10? cm?³and 10.5X10³㎠/V·sec, respectively.
TiN films were prepared on Si(100) substrate by ICP-CVD(inductively coupled plasma chemical vapor deposition) using TEMAT(tetrakis ethymethamido titanium : Ti[N(CH₃)(C2₂H?]₄) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TiN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy(XPS).
Polycrystalline TiN films B1 structure were grown at temperatures over 300℃. Perferentially oriented along TiN(200) films were obtained at temperatures over 400℃ with the folw rates of 5 and 100 sccm for N₂and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TiN and SiO₂was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at 500℃ are 2070 μ Ωcm, 6.06X10? cm?³and 10.5X10³㎠/V·sec, respectively.
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