非晶質 Se의 TSC에 관한 硏究 = Thermally Stimulated Current in Amorphous Selenium

국문 초록 (Abstract)

TSC 法을 이용하여 非晶質 Se 內의 deep trap을 調査하였다. trap activation energy를 구하는데 peak shape法, initial rise法 및 heating rate法을 사용하였으며 TSC 曲線은 204K와 310K에서 각각 peak를 보임을 알았다. 이 TSC 曲線으로부터 두 개의 hole trap levels이 存在함을 알았고 그 값은 0.92eV와 0.23eV이었다. 또한 이때 trap carrier들이 주로 hole임을 알 수 있었다.

다국어 초록 (Multilingual Abstract)

Deep traps in amorphous selenium are measured by means of a thermally stimulated current(TSC) technique. Peak shape method, initial rise method, and heating rate method are applied to obtain the trap activation energy. Two TSC peaks were observed near 204K and 310K, which were identified as having originated from two hole trap levels at 0.92eV and 0.23eV, above the valence band respectively. It is found that he trapped carriers are mainly holes in the temperature range 70∼330K.