Enhancement of Luminescence Properties of InGaAs/GaAs Quantum Dots by Control of AsH3 Overpressure during Growth Interruption

다국어 초록 (Multilingual Abstract)

The luminescence property of self-assembled InGaAs quantum dots (QDs) on GaAs substrates was optimized by controlling the AsH3 overpressure during growth interruption. It is seen that proper growth interruption without AsH3 overpressure after QDs have been formed is effective in enhancing the luminescence intensity from QDs. It is also seen that the agglomeration of QDs into large size is reduced and the size of the grown QDs becomes more uniform under this condition. It is believed that a continuous supply of AsH3 during growth interruption after QDs have been formed induces Ga and In migration so that several QDs agglomerate into a large cluster and the luminescence intensity deteriorates.

다국어 초록 (Multilingual Abstract)

The luminescence property of self-assembled InGaAs quantum dots
(QDs) on GaAs substrates was optimized by controlling the AsH3
overpressure during growth interruption. It is seen that proper
growth interruption without AsH3 overpressure after QDs have been
formed is effective in enhancing the luminescence intensity from
QDs. It is also seen that the agglomeration of QDs into large size
is reduced and the size of the grown QDs becomes more uniform under
this condition. It is believed that a continuous supply of AsH3
during growth interruption after QDs have been formed induces Ga and
In migration so that several QDs agglomerate into a large cluster
and the luminescence intensity deteriorates.

참고문헌 (Reference)

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