The CeO₂ intermediate layer was inserted by rf-sputter system between the TiO_2 layer and the Si substrate. TiO₂films were deposited by metal-organic chemical-vapor-deposition (MOCVD) on Si substrates. The thickness of TiO₂ was 20 nm), and that ...
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https://www.riss.kr/link?id=A19597233
1999
Korean
104.000
학술저널
77-82(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
The CeO₂ intermediate layer was inserted by rf-sputter system between the TiO_2 layer and the Si substrate. TiO₂films were deposited by metal-organic chemical-vapor-deposition (MOCVD) on Si substrates. The thickness of TiO₂ was 20 nm), and that ...
The CeO₂ intermediate layer was inserted by rf-sputter system between the TiO_2 layer and the Si substrate. TiO₂films were deposited by metal-organic chemical-vapor-deposition (MOCVD) on Si substrates. The thickness of TiO₂ was 20 nm), and that of CeO₂ was in the 3-65 nm regime. The insertion of the CeO₂ intermediate layer reduced the leakage current significantly after rapid thermal annealing (RTA) in O₂ ambient for 3 min. After HTA, the TiO₂/CeO₂/Si structure showed a significantly lower leakage current than the TiO₂/Si structure. The CeO₂ thickness of the TiO₂/CeO₂/Si structure did not affect leakage current reduction. The formation of the intermixed structure of TiO₂ and CeO₂ at the TiO₂/CeO₂ interface by RTA was thought to contribute to the reduction of the leakage current.
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