ZnO Buffer Layer에 의한 ZnO 박막의 결정학적 특성에 관한 연구 = A Study of the Crystallographic Characteristic of ZnO Thin Film Grown on ZnO Buffer Layer

다국어 초록 (Multilingual Abstract)

In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.