원자층 증착법을 활용한 SnO₂의 두께에 따른 전자 이동도 분석 = Understanding Electric Properties Thickness of SnO₂ with Atomic Layer Deposition

다국어 초록 (Multilingual Abstract)

Wide-bandgap perovskite solar cells enable high open-circuit voltages, which are crucial for tandem solar cells, but suffer from increased recombination and stability issues owing to bandgap-induced structural and interfacial defects. We precisely tuned the SnO₂ thickness via atomic layer deposition and used time-resolved photoluminescence and pulsed-voltage space- charge-limited current analyses to investigate charge transport and recombination. These results reveal the critical influence of the electron transport layer (ETL) thickness on the electric field distribution and interfacial recombination, providing design guidelines for high-efficiency, stable tandem top cells. This study advances the development of next-generation photovoltaic devices.