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      KCI등재 SCI SCIE SCOPUS

      Optimization of the Patterning Processing and Electrical Characteristics of a Photopatternable Organosiloxane-Based Gate Dielectric for Organic Thin-Film Transistors

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      https://www.riss.kr/link?id=A104323519

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      다국어 초록 (Multilingual Abstract)

      A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-croslinkable organic functional group for photopaternability and a Zr-based alkoxide, which provided for a high dielectric constant (∽5.5). To obtain a precisely paterned dielectric layer with a linewidth of 3 μm, the pre- bake temperature and the UV iradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-croslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.
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      A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide,...

      A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-croslinkable organic functional group for photopaternability and a Zr-based alkoxide, which provided for a high dielectric constant (∽5.5). To obtain a precisely paterned dielectric layer with a linewidth of 3 μm, the pre- bake temperature and the UV iradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-croslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.

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      참고문헌 (Reference)

      1 G. H. Gelinck, 3 : 106-, 2004

      2 S. H. Lee, 90 : 033502-, 2007

      3 S. Jeong, 111 : 16083-, 2007

      4 S. Pyo, 4 : 619-, 2005

      5 S. J. Choi, 90 : 063507-, 2007

      6 S. F. Nelson, 72 : 1854-, 1998

      7 B. K Crone, 91 : 10140-, 2002

      8 C. D. Dimitrakopoulos, 45 : 11-, 2001

      9 H. Edzer, 14 : 1201-, 2002

      10 B. K Crone, 403 : 521-, 2000

      1 G. H. Gelinck, 3 : 106-, 2004

      2 S. H. Lee, 90 : 033502-, 2007

      3 S. Jeong, 111 : 16083-, 2007

      4 S. Pyo, 4 : 619-, 2005

      5 S. J. Choi, 90 : 063507-, 2007

      6 S. F. Nelson, 72 : 1854-, 1998

      7 B. K Crone, 91 : 10140-, 2002

      8 C. D. Dimitrakopoulos, 45 : 11-, 2001

      9 H. Edzer, 14 : 1201-, 2002

      10 B. K Crone, 403 : 521-, 2000

      11 K H. Hass, 2 : 571-, 2000

      12 U. Hass, 73 : 235339-, 2006

      13 S. Jeong, 89 : 092101-, 2006

      14 Y. M. Kim, 21 : 425-, 2002

      15 D. Lin-Vien, "The Handbook of Infrared and Raman Characteristic Frequencies of Organic Molecules" Academic 1991

      16 Sung Hun Jin, "Surface-State Modification of OTFT Gate Insulators by Using a Dilute PMMA Solution" 한국물리학회 44 (44): 185-189, 2004

      17 C. J. Brinker, "Sol-Gel Science" Academic Press 1990

      18 M. P. Stevens, "Polymer Chemistry" Addison-Wesley 1975

      19 Gi Heon Kim, "Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics" 한국물리학회 49 (49): 1239-1242, 2006

      20 성현 김, "Organic Transistors Using Polymeric Gate Dielectrics" 한국물리학회 42 (42): 614-617, 2003

      21 Jeong-In Han, "Organic Thin-Film Transistors on Flexible Substrates" 한국물리학회 48 (48): 118-121, 2006

      22 Min-Koo Han, "Experimental Study of the Hysteresis in Hydrogenated Amorphous Silicon Thin- Film Transistors for an Active Matrix Organic Light-Emitting Diode" 한국물리학회 48 (48): 76-79, 2006

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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