Formation of Nanostructures by Oxidation of Si at Low Temperature

다국어 초록 (Multilingual Abstract)

Formation processes of Si nanostructures were investigated. The samples were formed by remote plasma enhanced chemical vapor deposition of Si and subsequent annealing in an oxidizing ambient at 560℃. It was found that the film structure of the annealed samples critically depends on the crystallinity of the as-deposited samples. Amorphous films resulted in dot formation when annealed, whereas grain agglomeration was observed in the case of crystalline films. In addition, the dots were embedded within SiO_(2), whereas the agglomerated grains were isolated with no insulating material between them. These results were accounted for by taking into consideration the difference in kinetics involved during annealing.

목차 (Table of Contents)

• 1. Introduction
• 2. Experiments
• 3. Results
• 4. Conclusions
• Acknowledgments