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    KCI등재 SCIE SCOPUS

    Sub-6 GHz Noise-cancelling Balun-LNTA with Dualband Q-enhanced LC Notch Filter for 5G New Radio Cellular Applications

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    https://www.riss.kr/link?id=A108168307

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    다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

    This paper presents a blocker-tolerant broadband balun-low-noise transconductance amplifier (LNTA) with a high-Q dual-band LC notch filter for 5G new radio (NR) sub-6GHz cellular applications. The proposed balun-LNTA employs a noise-cancelling 1:5 CG-CS balun-LNA topology with local feedback gm-boosting and modified currentbleeding techniques to support entire bands of sub-6 GHz 5G NR application with less than 5 dB NF performance and balanced output of balun-LNTA.
    The dual-band Q-boosted LC notch filter with a bandswitchable differential inductor is also proposed to enhance blocker tolerance of the receiver by removing out-of-band blockers and strong transmitter leakage signals. Simulated in a 65-nm CMOS process, the designed balun-LNTA achieves a minimum noise figure of 2.38 dB, a maximum transconductance gain of 44 mS, an S11 of less than ‒10 dB over the frequency range of 50 MHz-6 GHz, an input-referred third-order intercept point of 1.82 dBm, and blocker rejection ratios of more than 15 dB. It consumes 5.9 mA from a nominal supply voltage of 1 V. Its active die area is 0.55 mm2.
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    This paper presents a blocker-tolerant broadband balun-low-noise transconductance amplifier (LNTA) with a high-Q dual-band LC notch filter for 5G new radio (NR) sub-6GHz cellular applications. The proposed balun-LNTA employs a noise-cancelling 1:5 CG-...

    This paper presents a blocker-tolerant broadband balun-low-noise transconductance amplifier (LNTA) with a high-Q dual-band LC notch filter for 5G new radio (NR) sub-6GHz cellular applications. The proposed balun-LNTA employs a noise-cancelling 1:5 CG-CS balun-LNA topology with local feedback gm-boosting and modified currentbleeding techniques to support entire bands of sub-6 GHz 5G NR application with less than 5 dB NF performance and balanced output of balun-LNTA.
    The dual-band Q-boosted LC notch filter with a bandswitchable differential inductor is also proposed to enhance blocker tolerance of the receiver by removing out-of-band blockers and strong transmitter leakage signals. Simulated in a 65-nm CMOS process, the designed balun-LNTA achieves a minimum noise figure of 2.38 dB, a maximum transconductance gain of 44 mS, an S11 of less than ‒10 dB over the frequency range of 50 MHz-6 GHz, an input-referred third-order intercept point of 1.82 dBm, and blocker rejection ratios of more than 15 dB. It consumes 5.9 mA from a nominal supply voltage of 1 V. Its active die area is 0.55 mm2.

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    참고문헌 (Reference)

    1 J. Kim, "Wideband inductorless balun-LNA employing feedback for low-power low-voltage applications" 60 (60): 2833-2842, 2012

    2 S. C. Blaakmeer, "Wideband balun-LNA with simultaneous output balancing, noise canceling and distortion-canceling" 43 (43): 1341-1350, 2008

    3 T. Kim, "CMOS channelselection low-noise amplifier with high-Q RF bandpass/band-rejection Filter for highly integrated RF front-ends" 30 (30): 280-283, 2020

    4 D. Lee, "CMOS channel-selection LNA with a feedforward N-path filter and calibrated blocker cancellation path for FEM-less cellular transceivers"

    5 S. Kim, "Broadband balun-LNA employing local feedback gm-boosting technique and balanced loads for low-power low-voltage applications" 67 (67): 4631-4640, 2020

    6 A. Vallese, "Analysis and design of an integrated notch filter for the rejection of interference in UWB systems" 44 (44): 331-343, 2009

    7 J. Lee, "A sub-6GHz 5G new radio RF transceiver supporting EN-DC with 3.15Gb/s DL and 1.27Gb/s UL in 14nm FinFET CMOS" 54 (54): 3541-3552, 2019

    8 K. Kwon, "A hybrid transformerbased CMOS duplexer with a single-ended notchfiltered LNA for highly integrated tunable RF frontends" 28 (28): 1032-1034, 2018

    9 D. Shin, "A blocker-tolerant receiver front end employing dual-band N-path balun-LNA for 5G new radio cellular applications"

    10 D. Lee, "A blocker-tolerant balunLNTA employing LC notch filter for 5G new radio cellular applications" 2021

    1 J. Kim, "Wideband inductorless balun-LNA employing feedback for low-power low-voltage applications" 60 (60): 2833-2842, 2012

    2 S. C. Blaakmeer, "Wideband balun-LNA with simultaneous output balancing, noise canceling and distortion-canceling" 43 (43): 1341-1350, 2008

    3 T. Kim, "CMOS channelselection low-noise amplifier with high-Q RF bandpass/band-rejection Filter for highly integrated RF front-ends" 30 (30): 280-283, 2020

    4 D. Lee, "CMOS channel-selection LNA with a feedforward N-path filter and calibrated blocker cancellation path for FEM-less cellular transceivers"

    5 S. Kim, "Broadband balun-LNA employing local feedback gm-boosting technique and balanced loads for low-power low-voltage applications" 67 (67): 4631-4640, 2020

    6 A. Vallese, "Analysis and design of an integrated notch filter for the rejection of interference in UWB systems" 44 (44): 331-343, 2009

    7 J. Lee, "A sub-6GHz 5G new radio RF transceiver supporting EN-DC with 3.15Gb/s DL and 1.27Gb/s UL in 14nm FinFET CMOS" 54 (54): 3541-3552, 2019

    8 K. Kwon, "A hybrid transformerbased CMOS duplexer with a single-ended notchfiltered LNA for highly integrated tunable RF frontends" 28 (28): 1032-1034, 2018

    9 D. Shin, "A blocker-tolerant receiver front end employing dual-band N-path balun-LNA for 5G new radio cellular applications"

    10 D. Lee, "A blocker-tolerant balunLNTA employing LC notch filter for 5G new radio cellular applications" 2021

    11 H. Darabi, "A blocker filtering technique for SAWless wireless receivers" 42 (42): 2766-2773, 2007

    12 H. Wang, "A Wideband inductorless LNA with local feedback and noise cancelling for low-power low-voltage applications" 57 (57): 1993-2005, 2010

    13 G. Qi, "A SAW-less tunable RF front end for FDD and IBFD combining an electrical-balance duplexer and a switched-LC N-path LNA" 53 (53): 1431-1442, 2018

    14 S. Kim, "A 50 MHz-1 GHz 2.3-dB NF noise-cancelling balun-LNA employing a modified current-bleeding technique and balanced Loads" 66 (66): 546-554, 2019

    15 M. Tsai, "A 12nm CMOS RF transceiver supporting 4G/5G UL MIMO" 176-177, 2020

    16 P. Mak, "A 0.46-mm2 4-dB NF unified receiver front-end for full-band mobile TV in 65-nm CMOS" 46 (46): 1970-1984, 2011

    17 C. Luo, "A 0.4-6-GHz 17-dBm B1dB 36-dBm IIP3 channel-selecting low-noise amplifier for SAW-less 3G/4G FDD diversity receivers" 64 (64): 1110-1121, 2016

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    학술지 이력
    연월일 이력구분 이력상세 등재구분
    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
    2014-01-21 학회명변경 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers KCI등재
    2010-11-25 학술지명변경 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE KCI등재
    2010-01-01 등재 등재학술지 선정 (등재후보2차) KCI등재
    2009-01-01 등재 등재후보 1차 PASS (등재후보1차) KCI등재후보
    2007-01-01 등재 등재후보학술지 선정 (신규평가) KCI등재후보
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    학술지 인용정보

    학술지 인용정보
    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.42 0.13 0.35
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.3 0.29 0.308 0.03
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