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    Investigation of Mechanical Stability during Electrothermal Annealing in a 3D NAND Flash Memory String

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    https://www.riss.kr/link?id=A108168305

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    Simulation studies are performed for better mechanical stability during using electro-thermal annealing (ETA) in 3D NAND flash memory. It is revealed that the mechanical stress is closely associated with the cell temperature and thermal expansion characteristic. Based on the thermal and material knowledges, various approaches for reducing the mechanical stress are proposed in terms of modification of bias configuration, alternative materials, and novel structure.
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    Simulation studies are performed for better mechanical stability during using electro-thermal annealing (ETA) in 3D NAND flash memory. It is revealed that the mechanical stress is closely associated with the cell temperature and thermal expansion char...

    Simulation studies are performed for better mechanical stability during using electro-thermal annealing (ETA) in 3D NAND flash memory. It is revealed that the mechanical stress is closely associated with the cell temperature and thermal expansion characteristic. Based on the thermal and material knowledges, various approaches for reducing the mechanical stress are proposed in terms of modification of bias configuration, alternative materials, and novel structure.

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    참고문헌 (Reference)

    1 Jun-Young Park, "Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink" Institute of Electrical and Electronics Engineers (IEEE) 40 (40): 212-215, 2019

    2 T.-H. Hsu, "Study of self-healing 3D NAND flash with micro heater to improve the performances and lifetime for fast NAND in NVDIMM applications" 1-4, 2019

    3 Jun-Young Park, "Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection" Institute of Electrical and Electronics Engineers (IEEE) 63 (63): 910-915, 2016

    4 Christian Monzio Compagnoni, "Reviewing the Evolution of the NAND Flash Technology" Institute of Electrical and Electronics Engineers (IEEE) 105 (105): 1609-1633, 2017

    5 Hang-Ting Lue, "Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage" IEEE 9.1.1-9.1.4, 2012

    6 Min-Kyeong Kim, "Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs" MDPI AG 13 (13): 124-, 2022

    7 Khwang-Sun Lee, "Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs" MDPI AG 10 (10): 1395-, 2021

    8 Woo-Jin Jung, "Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory" MDPI AG 12 (12): 1297-, 2021

    9 Dae-Han Jung ; Khwang-Sun Lee ; Jun-Young Park, "Demonstration of Multi-layered Macaroni Filler for Back-Biasing-Assisted Erasing Configuration in 3D V-NAND" 대한전자공학회 21 (21): 334-339, 2021

    10 Jun-Young Park, "Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration" Springer Science and Business Media LLC 6 (6): 2016

    1 Jun-Young Park, "Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink" Institute of Electrical and Electronics Engineers (IEEE) 40 (40): 212-215, 2019

    2 T.-H. Hsu, "Study of self-healing 3D NAND flash with micro heater to improve the performances and lifetime for fast NAND in NVDIMM applications" 1-4, 2019

    3 Jun-Young Park, "Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection" Institute of Electrical and Electronics Engineers (IEEE) 63 (63): 910-915, 2016

    4 Christian Monzio Compagnoni, "Reviewing the Evolution of the NAND Flash Technology" Institute of Electrical and Electronics Engineers (IEEE) 105 (105): 1609-1633, 2017

    5 Hang-Ting Lue, "Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage" IEEE 9.1.1-9.1.4, 2012

    6 Min-Kyeong Kim, "Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs" MDPI AG 13 (13): 124-, 2022

    7 Khwang-Sun Lee, "Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs" MDPI AG 10 (10): 1395-, 2021

    8 Woo-Jin Jung, "Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory" MDPI AG 12 (12): 1297-, 2021

    9 Dae-Han Jung ; Khwang-Sun Lee ; Jun-Young Park, "Demonstration of Multi-layered Macaroni Filler for Back-Biasing-Assisted Erasing Configuration in 3D V-NAND" 대한전자공학회 21 (21): 334-339, 2021

    10 Jun-Young Park, "Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration" Springer Science and Business Media LLC 6 (6): 2016

    11 H. Aochi, "BiCS Flash as a Future 3D NonVolatile Memory Technology for Ultra High Density Storage Devices" 1-2, 0581

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    학술지 이력

    학술지 이력
    연월일 이력구분 이력상세 등재구분
    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
    2014-01-21 학회명변경 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers KCI등재
    2010-11-25 학술지명변경 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE KCI등재
    2010-01-01 등재 등재학술지 선정 (등재후보2차) KCI등재
    2009-01-01 등재 등재후보 1차 PASS (등재후보1차) KCI등재후보
    2007-01-01 등재 등재후보학술지 선정 (신규평가) KCI등재후보
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    학술지 인용정보

    학술지 인용정보
    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.42 0.13 0.35
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.3 0.29 0.308 0.03
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