High-k HfO2 thin lms have been prepared mainly at 400 C in O2 atmosphere by pulsed laser deposition (PLD), and defects in the lm have been characterized by electron spin resonance (ESR).
Two ESR peaks are found at g ' 2:003 and 2:006. The g ' 2:006 pe...
High-k HfO2 thin lms have been prepared mainly at 400 C in O2 atmosphere by pulsed laser deposition (PLD), and defects in the lm have been characterized by electron spin resonance (ESR).
Two ESR peaks are found at g ' 2:003 and 2:006. The g ' 2:006 peak intensity is higher in the sample deposited at target-sample distance of 45 mm than in that deposited at 60 mm.
This is because part of the substrate and the lm are exposed to high-energy particles ablated during deposition and are hence damaged. Moreover, the peak at g ' 2:006 is related to the interface state density calculated from the high-frequency C V curve. On the other hand, the peak at
g ' 2:003 is related to the thickness of the interfacial layer, and thus may be attributed to defects in the interfacial layer.