GeSi strained layers and their applications : a reprint volume

목차 (Table of Contents)

• CONTENTS
• Preface = ⅸ
• Introduction = 1
• A brief review of Si／Ge strained epilayers and their applications / S C Jain ; A M Stoneham = 1
• Chapter 1: Growth, Nucleation, Mechanical Structure and Stability = 25
• Almost perfect epitaxial multilayers / J M Matthews ; A E Blakeslee = 25
• Elastic stain and misfit dislocation density in $$Si_{0.92}Ge_{0.08}$$ films on silicon substrates / E Kasper ; H-J Herzog = 28
• $$Ge_xSi_{1-x}$$／Si strained-layer superlattice grown by molecular beam epitaxy / J C Bean ; L C Feldman ; A T Fiory ; S Nakahara ; I K Robinson = 42
• Relaxation and strained-layer semiconductor structures via plastic flow / B W Dodson ; J Y Tsao = 47
• Low-temperature silicon epitaxy by ultrahigh vacuum chemical vapor deposition / B S Meyerson = 51
• Symmetrically strained Si／Ge superlattices on Si substrates / E Kasper ; H Kibbel ; H JorkeiH Brugger ; E Friess ; G Abstreiter = 54
• Totally relaxed $$Ge_xSi_{1-x}$$ layers with low threading dislocation densities grown on Si substrates / E A Fitzgerald ; Y-H Xie ; M LGree ; D Brasen ; A R Kortan ; J Michel ; Y-J Mii ; B E Weir = 57
• Direct imaging of interfacial ordering in ultrathin $$(Si_mGe_n)_p$$ superlattices / D E Jesson ; S J Pcnnycook ; J M Baribeau = 60
• Metal-induced dislocation nucIeation for metastable SiGe／Si / V Higgs ; P Kightley ; P J Goodhew ; P D Augustus = 64
• Theoretical comparison of the stability chatacteristics of capped and uncapped $$Ge_xSi_{1-x}$$ strained epilayers / S C Jain ; T .J Gosling ; J R Willis ; R Bullough ; P Balk = 67
• A new study of critical layer thickness, stability and strain relaxation in pseudomorphic $$Ge_xSi_{1-x}$$ strained epilayers / S C Jain ; T J Gosling ; J R Willis ; D H J Totterdell ; R Bllough = 74
• Misfit dislocation distributions in capped (buried) strained semiconductor layers / T J Gosling ; R Bullough ; S C Jain ; J R Willis = 91
• The energetics of dislocation array stability instrained epitaxial layers / T J Gosling ; J R Willis ; R Bullough ; S C Jain = 103
• Low-defect-density germanium on silicon obtained by a novel growth phenomenon / D P Malta ; J B Posthill ; R J Markunas ; T P Humphreys = 110
• A new approach to calculating the energy of systems of misfit dislocations in strained epitaxial layers / A Atkinson ; S C Jain = 113
• Energy of arrays of nonperiodic interacting dislocations in semiconductor strained epilayers: Implications for strain relaxation / U Jain ; S C Jain ; A Atkinson ; J Nijs ; R P Mertens ; R Van Overstraeten = 119
• Chapter 2: Band Structure, Mobility, and Optical Properties = 127
• 2.1: Band Structure = 127
• Measurement of the band gap of $$Ge_xSi_{1-x}$$／Si strained-layer heterostructures / D V Long ; R People ; J C Bean ; A M Sergent = 127
• Theoretical calculations of heterojunction discontinuities in the Si／Ge system / C G Van de Walle ; R M Martin = 130
• Band structure and symmetry analysis of coherently grown $$Si_{1-x}Ge_x$$ alloys on oriented substrates / Q M Ma ; K L Wang ; J N Schulman = 144
• Electrical and optical bandgaps of $$Ge_xSi_{1-x}$$ strained layers / S C Jain ; J Poortmans ; S S Iyer ; J J Loferski ; J Nijs ; R Mertens ; R Van Overstraeten = 162
• Valence band structures of heavily doped strained $$Ge_xSi_{1-x}$$ layers / Y Fu ; S C Jain ; M Willander ; J J Loferski = 168
• 2.2: Mobility = 174
• Effective mass and mobility of holes in strained $$Si_{1-x}Ge_x$$ layers on (001) $$Si_{1-y}Ge_y$$ substrate / S K Chun ; K L Wang = 174
• 2.3: Optical Absorption, Luminescence, Electroreflectance = 186
• 2.3.1: Optical Absorption = 186
• Intrinsic optical absorption in germanium-silicon alloys / R. Braunstein ; A R Moore ; F Herman = 186
• 2.3.2: Luminescence = 202
• Well-resolved band-edge photolumincscence of excitons confined in strained $$Si_{1-x}Ge_x$$ quantum wells / J C Sturm ; H Manoharan ; L C Lenchyshyn ; M L Thewalt ; N L Rowell ; J-P No$$\ddot e$$l ; D C Houghton = 202
• Photoluminescence in short-period Si／Ge strained-layer supcrlattices / R Zachai ; K Eberl ; G Abstreiter ; E Kasper ; H Kibbel = 206
• Luminescence of strained $$Si_{1-x}Ge_x$$ alloy layers grown by molecular beam epitaxy / V Arbet-Engels ; J M G Tijero ; A Manissadjian ; K L Wang ; V Higgs = 210
• 2.3.3: Electroreflcctance Structure and optical properties of Ge-Si ordered superlattices / J Bevk ; A Ourmazd ; L C Feldman ; T P Pearsall ; J M Bonar ; B A Davidson ; J P Mannaerts = 213
• Origin of the optical transitions in ordered Si／Ge(001) superlattices / M S Hybertsen ; M Schl$$\ddot u$$ter ; R People ; S A Jackson ; D V Lang ; T P Pearsall ; J C Bean ; J M Vandenberg ; J Bevk = 216
• Optical spectra of a $$(Si_4Ge_4)_5$$ quantum well structure in an external electric field / K. S Wong ; M Jaros = 220
• Chapter 3: Applications = 223
• 3.1:DHBTs = 223
• MBE-grown Si／SiGe HBT's with high $$\beta$$, $$f_T$$, and $$f_{max}$$ / A Gruhle ; H Kibbel ; U K$$\ddot o$$nig ; U Erben ; E Kasper = 223
• 91 GHz SiGe HBTs grown by MBE / A Gruhle ; H Kibbel ; U Erben ; E Kasper = 226
• Sub-30ps ECL circuits using high-$$f_T$$ Si and SiGe epitaxial base SEEW transistors / J N Burghartz ; J H Comfort ; G L Patton ; J D Cressler ; B S Meyerson ; J M C Stork ; J Y-C Sun ; G Scilla ; J Warnock ; B J Ginsberg ; K Jenklns ; K- Y Toh ; D L Harame ; S R Mader = 228
• 75-GHz$$f_T$$-SiGe-base heterojunction bipolar transistors / G L Patton ; J H Comfort ; B S Meyerson ; E F Crabb$$\acute e$$ ; G J Scilla ; E de Fr$$\acute e$$sart ; J M C Stork ; J Y-C Sun ; D L Harame ; J N Burghartz = 232
• 3.2: Optical Detectors = 235
• Integrated waveguide-photodetector using Si／SiGe multiple quantum wells for long wavelength applications / V P Kesan ; P G May ; E Bassous ; S S Iyer = 235
• Normal incidence infrared detector using p-type SiGe／Si multiple quantum wells / J S Park ; R P G Karunasiri ; K L Wang = 239
• Intersubband absorption in Sb $$\delta$$-doped Si／$$Si_{1-x}Ge_x$$ quantum well structures grown on Si (110) / C Lee ; K L Wang = 242
• Long-wavelength $$Ge_xSi_{1-x}$$／Si heterojunction infrared detectors and 400 × 400-element imager arrays / B- Y Tsaur ; C K Chen ; S A Marino = 245
• 3.3: 2D Mobility and MODFETs = 249
• High-electron-mobility Si／SiGe heterostructures: influence of the relaxed SiGe buffer layer / F Sch$$\ddot a$$ffler ; D T$$\ddot o$$bben ; H-J Herzog ; G Abstreiter ; B Holl$$\ddot a$$nder = 249
• p-type Ge-channel- MODFET's with high transconductance grown on Si substrates / U K$$\ddot o$$nig ; F Sch$$\ddot a$$ffler = 256
• Strain-controlled Si-Ge modulation-doped FET with ultrahigh hole mobility / E Murakami ; K Nakagawa ; A Nishida ; M Miyao = 259
• 3.4: MOSFETs = 262
• Enhancement-mode quantum-well $$Ge_xSi_{1-x}$$ PMOS / D K Nayak ; JCS Woo ; J S Park ; K-LWang ; K P MacWilliams = 262
• High performance 0.25 $$\mu$$m p-MOSFETs with silicon-germanium channels for 300K and 77K operation / V P Kesan ; S Subbanna ; P J Restle ; M J Tejwani ; J M Aitkin ; S S Iyer ; J A Ott = 265
• 3.5: Resonant Tunnel Diodes (RTDs) = 269
• Resonant tunneling of holes in Si／$$Ge_xSi_{1-x}$$ / Fu. Q Chen ; M Willander = 269
• SiGe resonant tunneling hot-carrier transistor / S S Rhee ; G K Chang ; T K Carns ; K L Wang = 275
• 3.6: Other Applications = 278
• 3.6.1:MITATT Diodes = 278
• Si／SiGe Heterostructure MITATT diode / J F Luy ; H Jorke ; H Kibbel ; A Casel ; E Kasper = 278
• 3.6.2: Quantum Well Injection and Transit Time (QWITT) Diode(s) = 280
• Measurement of the activation barrier to nucleation of dislocations in thin films / F K LeGoues ; P M Mooney ; J Tersoff = 280
• 3.6.3: SiGe Optoelectronic Switch(es) = 285
• Si／SiGe digital optoelectronic switch / S J Kovacic ; J G Simmons ; K Song ; J-P No$$\ddot e$$l ; D C Houghton = 285
• 3.6.4: SiGe Photoconductor for High Speed Sampling and Generating Clocks = 288
• 1 GHz integrated poly-Si and -SiGe photoconductors with BiCMOS compatibility / A Hai ; J D Morse ; R W Dutton = 288
• Extensive bibliography of the papers published on GeSi alloys, strained layers, quantum wells and superlattices from 1949 to 1991 = 292