The quantum mechanical tunneling time through a double barrier resonant tunneling diode is calculated for incident electron energies. One of the most important issues for ultrahigh speed applications is the response property which seems to be directly...
The quantum mechanical tunneling time through a double barrier resonant tunneling diode is calculated for incident electron energies. One of the most important issues for ultrahigh speed applications is the response property which seems to be directly related to the time required for an electron to tunnel through the device. In this paper, we obtain the time tunneling time delay from a steady state scattering approach using the result of Wigner which provides a easy-to-use result which can avoid time-consuming numerical computations. The result is believed to be accurate since it is based on general results for the lifetime of any resonant state. The tunneling time delay considered in here indicates that the ultimate device response of GaAs/AIGaAs double barrier diodes (DBDs) is in the sub-picosecond regime.