A doping layer of thickness 2 nm of DCJTB(guest) was dopoed 1 % and varied its location 5nm each from the anode to the cathode in a single layer Alq(60 nm, host) OLED in order to investigate the region of charge recombination and light emission. Major...
A doping layer of thickness 2 nm of DCJTB(guest) was dopoed 1 % and varied its location 5nm each from the anode to the cathode in a single layer Alq(60 nm, host) OLED in order to investigate the region of charge recombination and light emission. Major emission peak was located 20 nm from the anode and the emission region was shown to be spread through the whole layer of Alq. We also investigate a method to determine the recombination zone with two-color filter from TEL