CdS this films have been prepared by the chemical vapor deposition method, where the ultrasonic stirrer has been used as an evaporator of the mixed solution of cadium chloride and thiourea, and their electrical properties and crystal structures associ...
CdS this films have been prepared by the chemical vapor deposition method, where the ultrasonic stirrer has been used as an evaporator of the mixed solution of cadium chloride and thiourea, and their electrical properties and crystal structures associated with the growth conditions have been investigated. This investigation shows that the electrical properties and crystal structures of CdS thin Films can be stron-gly influenced by substrate temperature, concentrations of mixed solution, evaporating rate and cooling rate. About 350℃ ,the exedmt CdS thin films arc obtained, the results were p^(12)~10^(a)cm, u=10㎠/v sec n=~10^(14)cm^(-13) and hexagonal structures with the principal orientation (002).