http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
0.25 Micrometre smart power technology optimised for wireless and consumer applications
Zhu, R.; Parthasarathy, V.; Khemka, V.; Bose, A.; Roggenbauer, T.; Lee, G.; Baumert, B.; Hui, P.; Rodriquez, P.; Collins, D. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.198-202
Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits
Udugampola, U. N. K.; McMahon, R. A.; Udrea, F.; Sheng, K.; Amaratunga, G. A. J.; Narayanan, E. M. S.; Hardikar, S.; De Souza, M. M. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.203-206
Yoshida, S.; Li, J.; Wada, T.; Takehara, H. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.207-210
600V-IGBT3: trench field stop technology in 70 um ultra thin wafer technology
Ruthing, H.; Umbach, F.; Hellmund, O.; Kanschat, P.; Schmidt, G. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.211-214
High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications
Xu, S.; Baiocchi, F.; Safar, H.; Lott, J.; Shibib, A.; Xie, Z.; Nigam, T.; Jones, B.; Thompson, B.; Desko, J. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.215-218
Siemieniec, R.; Lutz, J.; Herzer, R. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.219-224
Improved method for determining inversion layer mobility of electrons in trench MOSFETs
van den Heuvel, M. G. L.; Hueting, R. J. E.; Hijzen, E. A.; Zandt, M. A. A. i. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.225-230
Zhao, J. H.; Tone, K.; Li, X.; Alexandrov, P.; Fursin, L.; Weiner, M. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.231-237
W-gated trench power MOSFET (WFET)
Darwish, M.; Yue, C.; Lui, K. H.; Giles, F.; Chan, B.; Chen, K.-I.; Pattanayak, D.; Chen, Q.; Terrill, K.; Owyang, K. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.238-242
Reverse blocking IGBT for matrix converter with ultra-thin wafer technology
Takei, M.; Naito, T.; Ueno, K. INSTITUTION OF ELECTRICAL ENGINEERS 2004 p.243-248