분무합성법으로 제작한$\alpha-Ga_2S_3$ 및 $\alpha-Ga_2S_3:Co^{2+}$ 박막의 광학적 특성 = Optical Properties of Undoped and $Co^{2+}$-doped $\alpha-Ga_2S_3$Thin Films by Spray Pyrolysis

다국어 초록 (Multilingual Abstract)

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.