BJT (Bipolar Junction Transistor) 전류 이득 정량화를 통한 잔존 수명 예측 연구 = A Study on the Residual Life Prediction through Bipolar Junction Transistor Current Gain Quantification

다국어 초록 (Multilingual Abstract)

A various electronic components are mounted on a printed circuit board and perform many functions, but it can cause problems such as board operation, because it undergoes long-term change. Therefore, we proceed with a Thermal Accelerated Life Testing (ALT) to understand the state of change of the device and predict the remaining useful life. Through this, we look forward to effectively replacing parts and managing system by monitoring in many industries.
In this study, there is a circuit breaker control board to control valves, pumps, motors, and solenoids in a nuclear power plant. One of the components of this card, NPN Silicon power transistor, the thermal stress was applied at 90℃ and 145℃ for 500 hours under the bias condition of 4.5V, 100mA in actual use condition. And the lifetime prediction was performed based on the measured BJT degradation mechanism tendency.

목차 (Table of Contents)

• Abstract
• I. 서론
• II. 실험
• Ⅲ. 결과
• Ⅳ. 결론 및 향후 연구 방향
• 참고문헌