<P>HgTe nanocrystal-based thin-film transistors (TFTs) with Al<SUB>2 </SUB>O<SUB>3</SUB> top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our ...
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https://www.riss.kr/link?id=A107533497
2007
-
SCOPUS,SCIE
학술저널
42-44(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>HgTe nanocrystal-based thin-film transistors (TFTs) with Al<SUB>2 </SUB>O<SUB>3</SUB> top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our ...
<P>HgTe nanocrystal-based thin-film transistors (TFTs) with Al<SUB>2 </SUB>O<SUB>3</SUB> top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 degC, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm<SUP>2</SUP>/Vmiddots, a threshold voltage of +0.2 V, and an on/off current ratio of 1times10<SUP>3</SUP>. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates</P>