Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

다국어 초록 (Multilingual Abstract)

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. EXPERIMENTAL
• Ⅲ. RESULTS AND DISCUSSIONS
• Ⅳ. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

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