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      KCI등재 SCI SCIE SCOPUS

      Research on Contamination-Resistant SiO2 Optical Thin Films in a Vacuum Environment

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      https://www.riss.kr/link?id=A106950781

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      다국어 초록 (Multilingual Abstract)

      The Contamination resistance of SiO2 optical films prepared by using sol-gel method was investigated and improved in this research.
      FDTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane) was used to modify SiO2 thin films. Fourier Transform Infrared Spectrometer (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the components on surface of the SiO2 thin films. The optical properties and hydrophobicity were also measured. The results show that the SiO2 thin film modification with FDTS causes -OH groups to be replaced by organic groups containing fluorine. The transmittance peak of SiO2 thin film changes, and the surface contact angle of water droplets on the SiO2 film increases from 35° to 107° after surface modification with FTDS. After the SiO2 thin films had been put in a vacuum environment for 24 hours, the peak transmittance of the modified SiO2 film under the same conditions is reduced to 0.14%, which is less than 3.17% of the unmodified film. The peak transmittance of the modified SiO2 thin films is also improved.
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      The Contamination resistance of SiO2 optical films prepared by using sol-gel method was investigated and improved in this research. FDTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane) was used to modify SiO2 thin films. Fourier Transform Infrared Spec...

      The Contamination resistance of SiO2 optical films prepared by using sol-gel method was investigated and improved in this research.
      FDTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane) was used to modify SiO2 thin films. Fourier Transform Infrared Spectrometer (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the components on surface of the SiO2 thin films. The optical properties and hydrophobicity were also measured. The results show that the SiO2 thin film modification with FDTS causes -OH groups to be replaced by organic groups containing fluorine. The transmittance peak of SiO2 thin film changes, and the surface contact angle of water droplets on the SiO2 film increases from 35° to 107° after surface modification with FTDS. After the SiO2 thin films had been put in a vacuum environment for 24 hours, the peak transmittance of the modified SiO2 film under the same conditions is reduced to 0.14%, which is less than 3.17% of the unmodified film. The peak transmittance of the modified SiO2 thin films is also improved.

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      참고문헌 (Reference)

      1 C. J. Stolz, 5193 : 50-, 2003

      2 X. Zhang, 7 : 31-, 2017

      3 Y. Liu, 41 : 331-, 2012

      4 X. Wang, 61 : 206-, 2012

      5 J. Sun, 16 : 16684-, 2014

      6 Q. Zhang, 5 : 4529-, 2014

      7 I. M. Thomas, 3492 : 220-, 1999

      8 D. Shang, 105 : 267-, 2017

      9 L. Yang, 54 : 126101-, 2015

      10 X. Wang, 34 : 10262-, 2018

      1 C. J. Stolz, 5193 : 50-, 2003

      2 X. Zhang, 7 : 31-, 2017

      3 Y. Liu, 41 : 331-, 2012

      4 X. Wang, 61 : 206-, 2012

      5 J. Sun, 16 : 16684-, 2014

      6 Q. Zhang, 5 : 4529-, 2014

      7 I. M. Thomas, 3492 : 220-, 1999

      8 D. Shang, 105 : 267-, 2017

      9 L. Yang, 54 : 126101-, 2015

      10 X. Wang, 34 : 10262-, 2018

      11 X. Zhang, 74 : 698-, 2015

      12 H. Ren, 25 : 55-, 2018

      13 X. Li, 59 : 539-, 2011

      14 Y. Yuan, 118 : 222-, 2015

      15 O. Favrat, 293 : 132-, 2014

      16 W. Zhou, 255 : 2885-, 2008

      17 X. Zhang, 58 : 340-, 2011

      18 Y. Zhang, 69 : 86-, 2012

      19 Y. Liu, 68 : 81-, 2013

      20 X. Zhang, 4 : 9838-, 2014

      21 G. S. Vicente, 85 : 676-, 2011

      22 J. H. Sun, 4 : 50873-, 2014

      23 X. X. Zhang, 122 : 596-, 2017

      24 X. Zhu, 800 : 9-, 2019

      25 S. Wang, 67 : 339-, 2013

      26 김동완, "Fabrication of Fast-response Ultraviolet Light Sensors with LZO Thin Films using Sol-gel Spin-coating Method" 한국물리학회 72 (72): 417-423, 2018

      27 이욱빈, "Enhancement of the Ultraviolet Photoresponsivity of Al-doped ZnO Thin Films Prepared by using the Sol-gel Spin-coating Method" 한국물리학회 72 (72): 610-614, 2018

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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