Ferroelectric $SrBi_2Ta_2O_9$ Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using $Sr[Ta(OEt)_5(dmae)]_2$ and $Bi(C_6H_5)_3$ = Ferroelectric $SrBi_2Ta_2O_9$ Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using $Sr[Ta(OEt)_5(dmae)]_2$ and $Bi(C_6H_5)_3$

다국어 초록 (Multilingual Abstract)

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.