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    수열합성법으로 제조된 β-Ga2O3 나노입자의 구조적, 전기적, 광학적 특성 분석 연구 = Hydrothermally Synthesized β-Ga₂O₃ Nanoparticles: Structural, Optical, and Electrical properties.

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    https://www.riss.kr/link?id=T17370215

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    This thesis investigates the structural, electrical, and optical properties of β-Ga2O3 nanoparticles synthesized via the hydrothermal method for next-generation wide bandgap (WBG) device applications. The synthesized nanoparticles, with an average size of approximately 900 nm, were confirmed to be single-phase monoclinic β-Ga2O3 with a wide bandgap of 4.91eV. To evaluate the electrical performance, Ni/n-Si Schottky barrier diodes (SBDs) were fabricated and analyzed. The fundamental diode parameters were extracted from the I-V characteristics using the Thermionic Emission (TE) equation, where the ideality factor (n) improved from 1.39 to 1.37 and the Schottky barrier height (ΦB) increased from 0.72eV to 0.76eV. To ensure the accuracy and reliability of these results, additional analyses were performed using Cheung's method, Norde's function, and C-V measurements, which showed high consistency with the TE model parameters. Furthermore, temperature-dependent I-V (I-V-T) analysis confirmed that the β-Ga2O3 coating reduced the standard deviation of barrier distribution (σ0) from 0.17 eV to 0.14eV, indicating enhanced interface homogeneity. Finally, metal-semiconductor-metal (MSM) photodetectors utilizing these nanoparticles exhibited a significant increase in photocurrent and responsivity in the 200 ~ 300 nm wavelength range compared to bare n-Si devices. These quantitative results suggest that hydrothermally synthesized β-Ga2O3nanoparticles provide strong potential for low-cost, high-performance optoelectronic and power electronic devices.
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    This thesis investigates the structural, electrical, and optical properties of β-Ga2O3 nanoparticles synthesized via the hydrothermal method for next-generation wide bandgap (WBG) device applications. The synthesized nanoparticles, with an average si...

    This thesis investigates the structural, electrical, and optical properties of β-Ga2O3 nanoparticles synthesized via the hydrothermal method for next-generation wide bandgap (WBG) device applications. The synthesized nanoparticles, with an average size of approximately 900 nm, were confirmed to be single-phase monoclinic β-Ga2O3 with a wide bandgap of 4.91eV. To evaluate the electrical performance, Ni/n-Si Schottky barrier diodes (SBDs) were fabricated and analyzed. The fundamental diode parameters were extracted from the I-V characteristics using the Thermionic Emission (TE) equation, where the ideality factor (n) improved from 1.39 to 1.37 and the Schottky barrier height (ΦB) increased from 0.72eV to 0.76eV. To ensure the accuracy and reliability of these results, additional analyses were performed using Cheung's method, Norde's function, and C-V measurements, which showed high consistency with the TE model parameters. Furthermore, temperature-dependent I-V (I-V-T) analysis confirmed that the β-Ga2O3 coating reduced the standard deviation of barrier distribution (σ0) from 0.17 eV to 0.14eV, indicating enhanced interface homogeneity. Finally, metal-semiconductor-metal (MSM) photodetectors utilizing these nanoparticles exhibited a significant increase in photocurrent and responsivity in the 200 ~ 300 nm wavelength range compared to bare n-Si devices. These quantitative results suggest that hydrothermally synthesized β-Ga2O3nanoparticles provide strong potential for low-cost, high-performance optoelectronic and power electronic devices.

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    목차 (Table of Contents)

    • 제1장. 서론 1
    • 1.1 Wide Bandgap (WBG) 반도체 - Ga2O3 1
    • 1.2 β-Ga2O3 나노구조 5
    • 1.3 Schottky Barrier Diode (SBD) 8
    • 1.4 Metal-Semiconductor-Metal Photodetector (MSM PD) 9
    • 제1장. 서론 1
    • 1.1 Wide Bandgap (WBG) 반도체 - Ga2O3 1
    • 1.2 β-Ga2O3 나노구조 5
    • 1.3 Schottky Barrier Diode (SBD) 8
    • 1.4 Metal-Semiconductor-Metal Photodetector (MSM PD) 9
    • 제2장. 실험 방법 10
    • 2.1 수열 합성법 10
    • 2.2 SBD 제작 공정 13
    • 2.3 MSM-PD 제작 공정 15
    • 2.4 분석 방법 17
    • 제3장. 결과 및 토론 25
    • 3.1 표면 구조 분석 25
    • 3.2 전기적 측정 결과 및 특성 분석 34
    • 3.3 광학적 측정 결과 및 특성 분석 51
    • 제4장. 결론 55
    • 제5장. 참고문헌 56
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