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Heterostructures tomorrow: from physics to Moore's law
Kroemer, H. Philadelphia; Institute of Physics; 1999 2000 p.1-12
State-of-the-art semi-insulating GaAs substrates
Jurisch, M. Philadelphia; Institute of Physics; 1999 2000 p.13-22
Conformal growth of III-Vs on Si: from low defect density materials to advanced devices
Gerard, B. Philadelphia; Institute of Physics; 1999 2000 p.23-30
Apostolopoulos, G. Philadelphia; Institute of Physics; 1999 2000 p.31-34
MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K. Philadelphia; Institute of Physics; 1999 2000 p.35-38
Selective area growth of GaAs and InGaAs on GaAs (111)B substrates by migration-enhanced epitaxy
Ito, M. Philadelphia; Institute of Physics; 1999 2000 p.39-42
MBE regrowth on Al~xGa~1~-~xAs cleaned by arsenic-free high temperature surface cleaning method
Nishioka, T. Philadelphia; Institute of Physics; 1999 2000 p.43-46
Optimized surface treatment for MBE regrowth of (Al,Ga)As on (Al,Ga)As
Hey, R. Philadelphia; Institute of Physics; 1999 2000 p.47-50
Wieck, A. D. Philadelphia; Institute of Physics; 1999 2000 p.51-54
Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M. Philadelphia; Institute of Physics; 1999 2000 p.55-58