<P>The influence of number fluctuation and position variation on channel dopants and gate metal grains on tunneling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs (MOSFETs). Based on the si...
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https://www.riss.kr/link?id=A107442485
2016
-
학술저널
5255-5258(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The influence of number fluctuation and position variation on channel dopants and gate metal grains on tunneling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs (MOSFETs). Based on the si...
<P>The influence of number fluctuation and position variation on channel dopants and gate metal grains on tunneling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs (MOSFETs). Based on the simulation results of randomly generated device samples, the shape of the statistical threshold voltage (V-th) distribution of TFETs associated with individual variation sources such as random dopant fluctuation (RDF) and work-function variation (WFV) have been found to be significantly different than that of MOSFETs. This analysis provides a detailed insight into the variation sources related to underlying physics of TFETs.</P>
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