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이 학술지의 논문 검색
Introductory Remarks - Status and Trends in Microscopic Physics and Modeling
Poate, J. M.; Schroeter, W. Electrochemical Society 1998 p.869-870
Invited: Diffusion Mechanisms in SiGe Alloys
Willoughby, A. F. W. Electrochemical Society 1998 p.871-883
Invited: Dopants and Intrinsic Point-Defects During Si Device Processing
Gossmann, H.-J. Electrochemical Society 1998 p.884-898
Invited: Point Defect Based Modeling of Dopant Diffusion and Transient Enhanced Diffusion in Silicon
Plummer, J. D. Electrochemical Society 1998 p.899-913
Point Defect Injection in Silicon During Thin Oxide Formation
Skarlatos, D.; Omri, M.; Tsamis, C.; Claverie, A. Electrochemical Society 1998 p.914-925
Vacancy Supersaturation Produced by High-Energy Ion Implantation
Venezia, V. C.; Eaglesham, D. J.; Haynes, T. E.; Agarwal, A. Electrochemical Society 1998 p.926-937
Manipulating Ion-Induced Defects to Improve Implantation Processing of Silicon
Roth, E. G.; Holland, O. W.; Meldrum, A. Electrochemical Society 1998 p.938-947
Electrical and Recombinative Properties of Preciptated and Interstitial Copper in Silicon
Istratov, A. A.; Hedemann, H.; Seibt, M.; Vyvenko, O. F. Electrochemical Society 1998 p.948-972
hydrogen Molecules in Crystalline Silicon
Weber, J.; Leitch, A. W. R.; Alex, V. Electrochemical Society 1998 p.973-983
Yoshida, Y.; Shimura, F. Electrochemical Society 1998 p.984-996