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이 학술지의 논문 검색
Growth of Tl-containing III-V Materials by Gas-Source Molecular Beam Epitaxy
Abernathy, C. R.;Antonell, M. J.;Sher, A.;Berding, M. Electrochemical Society 1996 p.1-9
Buchanan, D. A.; Lo, S.-H. Electrochemical Society 1996 p.3-14
Nucleation and Growth of Extended Defects in Silicon
Pantelides, S. T.;Ramamoorthy, M.;Reboredo, F. A. Electrochemical Society 1996 p.3-18
Tu, C. W.;Li, N. Y. Electrochemical Society 1996 p.10-18
Fukuda, H.; Endoh, T.; Nomura, S. Electrochemical Society 1996 p.15-27
InP Based Materials for Long Wavelength Optoelectronics Grown in Multiwafer Planetary Reactors
Beccard, R.;Schmitz, D.;Deufel, M.;Protzmann, H. Electrochemical Society 1996 p.19-23
Process-Induced Defects in Silicon: A Never Ending Story?
Kolbesen, B. O.;Cerva, H. Electrochemical Society 1996 p.19-37
Heteroepitaxial Layer Overgrowth of GaP on Structured Silicon Surfaces
Sukidi, N.;Dietz, N.;Bachmann, K. J.;Shingubara, S. Electrochemical Society 1996 p.24-29
EPR Study of the Defects in Porous Si/SiO~xN~y and Si~0~.~8~0Ge~0~.~2~0/SiGeO~2
Cantin, J. L.; Schoisswohl, M.; Von Bardeleben, H. J.; Morazzani, V. Electrochemical Society 1996 p.28-45
Characterization and Engineering of the Sb Hetero-antisite Defect in LEC Grown GaAs
Wilson, M. Electrochemical Society 1996 p.30-40