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      2005 춘계 학술발표회 논문집 : Metal-insulator-transition 특성을 나타내는 VO2 박막의 형성 = Proceedings of 2005 KSIEC Spring Meeting : Formation of VO2 thin film with metal-insulator-transition property

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      https://www.riss.kr/link?id=A45033505

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      VO_(x) thin films was prepared on Pt/Ti/SiO₂/Si substrate at room temperature by rf magnetron sputtering method. The deposition rate of VO_(x) thin films was investigated as a function of dc power and working gas. As dc power increased, the deposition rate increased. However, as the O₂ concentration in a O₂/Ar mixture increased, the deposition rate decreased. The phase change of deposited VOX thin films was investigated by x-ray diffraction. The plane and cross-sectional views of VO_(x) thin films before and after annealing were observed by field emission scanning electron microscopy. Metal insulator transition property of VO₂ thin films was measured using current-voltage measurement.
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      VO_(x) thin films was prepared on Pt/Ti/SiO₂/Si substrate at room temperature by rf magnetron sputtering method. The deposition rate of VO_(x) thin films was investigated as a function of dc power and working gas. As dc power increased, the depositi...

      VO_(x) thin films was prepared on Pt/Ti/SiO₂/Si substrate at room temperature by rf magnetron sputtering method. The deposition rate of VO_(x) thin films was investigated as a function of dc power and working gas. As dc power increased, the deposition rate increased. However, as the O₂ concentration in a O₂/Ar mixture increased, the deposition rate decreased. The phase change of deposited VOX thin films was investigated by x-ray diffraction. The plane and cross-sectional views of VO_(x) thin films before and after annealing were observed by field emission scanning electron microscopy. Metal insulator transition property of VO₂ thin films was measured using current-voltage measurement.

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