내장된 전극 구조를 갖는 정전척 제조 및 특성 = Fabrication and properties of the electrostatic chuck with embedded electrode structure

다국어 초록 (Multilingual Abstract)

In semiconductor industry, in order to chucking silicon wafer electrostatically, Al2O3 ceramics with high resistivity,
~ 1016 Ωcm widely have been used. However, there are some restrictions to use such chuck material on higher
resistance substrates, such as glass or sapphire wafer. Additionally the fabrication process was very complicated
and highly costly due to its separated structure ; electrode and ceramic body. In this study, Al2O3 compositions
were modified by various dopants ; TiO2, CuO and SiO2, and their sinterability, crystal structure, electrical
properties and chucking property were investigated. Also by lowering sintering temperature of ceramics to
~1200o
C , one body chuck with embedded electrode was prepared successfully through co-firing process. Both
of TiO2 and CuO were found to be key dopants on controlling the sintering temperature and electrical
resistivity. The prepared electrostatic chuck with embedded electrode showed ~1014Ωcm of resistivity, 4.01 g/cm3
of apparent density and 22~24 gf/cm2
of chucking, which means that the electrostatic chuck for application of
semiconductor and display processes can be effectively fabricated by using simple ceramic process.