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RISSWSi_(x) Films were deposited on polysilicon film by chemical vapor deposition process. Effects of processing conditions on the electrical properties of the WSi_(x) were studied. As the flow rate of SiH₄ and deposition temperature increases, the resi...
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화학기상증착 방법에 의한 WSi_(x) 박막의 제조 및 전기적 특성 = Processing and Electrical Properties of WSi_(x) Films Deposited on Polysilicon by Chemical Vapor Deposition for Semicondutor Devices
한글로보기부가정보
다국어 초록 (Multilingual Abstract)
WSi_(x) Films were deposited on polysilicon film by chemical vapor deposition process. Effects of processing conditions on the electrical properties of the WSi_(x) were studied. As the flow rate of SiH₄ and deposition temperature increases, the resistivity decreases, however, it decreases as the WF_(6) flow rate increases. The WSi_(x) deposited at the temperature below 480℃ was oxidized at 900℃ for maximum 90 min, which results in decrease of electrical resistivity by depleting Si from WSi_(x) film of low Si content. The WSi_(x), deposited at the temperature over 480℃ was rich in Si content, and it showed increase of electrical resistivity by depleting Si from WSi_(x) film.
WSi_(x) Films were deposited on polysilicon film by chemical vapor deposition process. Effects of processing conditions on the electrical properties of the WSi_(x) were studied. As the flow rate of SiH₄ and deposition temperature increases, the resistivity decreases, however, it decreases as the WF_(6) flow rate increases. The WSi_(x) deposited at the temperature below 480℃ was oxidized at 900℃ for maximum 90 min, which results in decrease of electrical resistivity by depleting Si from WSi_(x) film of low Si content. The WSi_(x), deposited at the temperature over 480℃ was rich in Si content, and it showed increase of electrical resistivity by depleting Si from WSi_(x) film.
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